{"id":84,"date":"2025-02-16T10:25:56","date_gmt":"2025-02-16T09:25:56","guid":{"rendered":"https:\/\/atri2.mtf.stuba.sk\/?page_id=84"},"modified":"2025-09-16T11:22:07","modified_gmt":"2025-09-16T09:22:07","slug":"technologies","status":"publish","type":"page","link":"https:\/\/atri.mtf.stuba.sk\/?page_id=84&lang=en","title":{"rendered":"Technologies"},"content":{"rendered":"\n<h3 class=\"wp-block-heading western\"><span lang=\"en-GB\">LABORATORY OF ION ACCELERATORS AND PLASMA TECHNOLOGIES<\/span><\/h3>\n\n\n\n<p class=\"wp-block-paragraph\"><span lang=\"en-GB\">Ion beam technologies enable to synthetize new materials, which are impossible by classical methods. Ion beam bombardment introduces the dopant (chemical element) into the substrate material at concentrations much higher than their respective solubility limits. Moreover ion-solid interaction results in modification of the substrate structure, interface mixing and other fascinating effects. Our equipment enables us to work with virtually all elements of the Periodic Table with energies ranging from 40keV up to 50MeV.&nbsp;Further the complex plasma-surface processes involved in sputtering, etching, ion implantation and deposition at nanoscale level is essential for design of new materials, surfaces and thin films. Further activities are dedicated to investigation of plasma\/surface interaction in technological plasmas.<\/span><\/p>\n\n\n\n<hr class=\"wp-block-separator has-alpha-channel-opacity\"\/>\n\n\n\n<div style=\"display:flex;align-items:center;\"><span style='font-size:100px;'>&#129175;<\/span><\/div>\n\n\n\n<h3 class=\"wp-block-heading\">TECHNICAL PARAMETERS<\/h3>\n\n\n\n<h5 class=\"wp-block-heading\">6MV Tandetron Tandem Accelerator<\/h5>\n\n\n\n<p class=\"wp-block-paragraph\">Experimental end-station for ion implantation (wafer size up to&nbsp;\u2205100mm) with substrate temperature control (-195&nbsp;\u00b0C to 800\u00b0C). End-station for Ion Beam Analysis covering RBS, PIXE and ERD (hydrogen depth profiling)<\/p>\n\n\n\n<h5 class=\"wp-block-heading\"><strong>500kV Implanter<\/strong><\/h5>\n\n\n\n<p class=\"wp-block-paragraph\">Experimental end-station for ion implantation (up to&nbsp;\u2205100mm) with substrate temperature control (-195&nbsp;\u00b0C to 800\u00b0C). Semi-automatic single wafer (up to&nbsp;\u2205200mm) processing end-station<\/p>\n\n\n\n<h5 class=\"wp-block-heading\"><strong>Magnetron sputering Cluster-System ST 75 DC\/RF<\/strong><\/h5>\n\n\n\n<p class=\"wp-block-paragraph\">Plasma power 300 W, Discharge current 1 A, Frequency 13,56 MHz,&nbsp; DC unit with 3 circular targets (\u2205 75mm) and&nbsp; RF unit with 3 circular targets (\u220575 mm). Maximum substrate diameter 100 mm with maximum height 10 mm. Substrat heating up to&nbsp; 500\u00b0C with substrate rotation up to 20rpm.<\/p>\n\n\n\n<h5 class=\"wp-block-heading\"><strong>PIII \u2013 Plasma Immersion Ion Implantation<\/strong><\/h5>\n\n\n\n<p class=\"wp-block-paragraph\">Plasma power 1&nbsp;000 W, Frequency of RF antena 13,56 MHz, Accelerating voltage (substrate voltage) -20 \/ -35 kV with pulsed frequencies 1 &#8211; 100 \u00b5s. Vertical shift of the substrate 30 cm and rotation 0 &#8211; 30 rpm.<\/p>\n\n\n\n<h5 class=\"wp-block-heading\"><strong>Ellipsometer (M 2000)<\/strong><\/h5>\n\n\n\n<p class=\"wp-block-paragraph\">In-situ and ex-situ measurement options, Layer thickness measurement: from sup-nm to tens of micrometers for transparent layers, Broad spectrum measurement, Wavelength 245\u20131000 nm.<\/p>\n\n\n\n<hr class=\"wp-block-separator has-alpha-channel-opacity\"\/>\n\n\n\n<h3 class=\"wp-block-heading\">LABORATORY&nbsp;<span lang=\"en-GB\">OF NUMERICAL MODELING<\/span><\/h3>\n\n\n\n<p class=\"wp-block-paragraph\"><span lang=\"en-GB\">Problems solved by researchers in the frame of applied research for industry are e. g. development of computer application for numerical modeling of magnetic fields in the high reliability relays (Hengstler\/Danaher) and design and optimization of high performance ultra-sound transducers (Kraintek). The Laboratory uses computational resources of HPC cluster of the Slovak University of Technology and Slovak Infrastructure for High Performance Computing.<\/span><\/p>\n\n\n\n<hr class=\"wp-block-separator has-alpha-channel-opacity\"\/>\n\n\n\n<h3 class=\"wp-block-heading\">LABORATORY OF AUTOMATIZATION<\/h3>\n\n\n\n<p class=\"wp-block-paragraph\"><span id=\"result_box\" class=\"\" lang=\"en\">The Department of Automation, Informatics and Applied Mathematics uses available laboratories built within the University Science Park project: The&nbsp;<\/span><span id=\"result_box\" class=\"\" lang=\"en\"><span class=\"\">Laboratory of<\/span><\/span><span id=\"result_box\" class=\"\" lang=\"en\"><span class=\"\">&nbsp;Control Systems , the&nbsp;<\/span><\/span><span id=\"result_box\" class=\"\" lang=\"en\"><span class=\"\">Laboratory of<\/span><\/span><span id=\"result_box\" class=\"\" lang=\"en\"><span class=\"\">&nbsp;ICIM&nbsp; and the&nbsp;<\/span><\/span><span id=\"result_box\" class=\"\" lang=\"en\"><span class=\"\">Laboratory of<\/span><\/span><span id=\"RESULT_BOX\" class=\"\" lang=\"EN\"><span class=\"\">&nbsp;<\/span><\/span>Integrated information and control systems.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>LABORATORY OF ION ACCELERATORS AND PLASMA TECHNOLOGIES Ion beam technologies enable to synthetize new materials, which are impossible by classical methods. Ion beam bombardment introduces the dopant (chemical element) into &#8230;<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"template-fullwidth.php","meta":{"_eb_attr":"","footnotes":""},"class_list":["post-84","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/atri.mtf.stuba.sk\/index.php?rest_route=\/wp\/v2\/pages\/84","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/atri.mtf.stuba.sk\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/atri.mtf.stuba.sk\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/atri.mtf.stuba.sk\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/atri.mtf.stuba.sk\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=84"}],"version-history":[{"count":7,"href":"https:\/\/atri.mtf.stuba.sk\/index.php?rest_route=\/wp\/v2\/pages\/84\/revisions"}],"predecessor-version":[{"id":358,"href":"https:\/\/atri.mtf.stuba.sk\/index.php?rest_route=\/wp\/v2\/pages\/84\/revisions\/358"}],"wp:attachment":[{"href":"https:\/\/atri.mtf.stuba.sk\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=84"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}