LABORATORY OF ION ACCELERATORS AND PLASMA TECHNOLOGIES
Ion beam technologies enable to synthetize new materials, which are impossible by classical methods. Ion beam bombardment introduces the dopant (chemical element) into the substrate material at concentrations much higher than their respective solubility limits. Moreover ion-solid interaction results in modification of the substrate structure, interface mixing and other fascinating effects. Our equipment enables us to work with virtually all elements of the Periodic Table with energies ranging from 40keV up to 50MeV. Further the complex plasma-surface processes involved in sputtering, etching, ion implantation and deposition at nanoscale level is essential for design of new materials, surfaces and thin films. Further activities are dedicated to investigation of plasma/surface interaction in technological plasmas.
TECHNICAL PARAMETERS
6MV Tandetron Tandem Accelerator
Experimental end-station for ion implantation (wafer size up to ∅100mm) with substrate temperature control (-195 °C to 800°C). End-station for Ion Beam Analysis covering RBS, PIXE and ERD (hydrogen depth profiling)
500kV Implanter
Experimental end-station for ion implantation (up to ∅100mm) with substrate temperature control (-195 °C to 800°C). Semi-automatic single wafer (up to ∅200mm) processing end-station
Magnetron sputering Cluster-System ST 75 DC/RF
Plasma power 300 W, Discharge current 1 A, Frequency 13,56 MHz, DC unit with 3 circular targets (∅ 75mm) and RF unit with 3 circular targets (∅75 mm). Maximum substrate diameter 100 mm with maximum height 10 mm. Substrat heating up to 500°C with substrate rotation up to 20rpm.
PIII – Plasma Immersion Ion Implantation
Plasma power 1 000 W, Frequency of RF antena 13,56 MHz, Accelerating voltage (substrate voltage) -20 / -35 kV with pulsed frequencies 1 – 100 µs. Vertical shift of the substrate 30 cm and rotation 0 – 30 rpm.
Ellipsometer (M 2000)
In-situ and ex-situ measurement options, Layer thickness measurement: from sup-nm to tens of micrometers for transparent layers, Broad spectrum measurement, Wavelength 245–1000 nm.
LABORATORY OF NUMERICAL MODELING
Problems solved by researchers in the frame of applied research for industry are e. g. development of computer application for numerical modeling of magnetic fields in the high reliability relays (Hengstler/Danaher) and design and optimization of high performance ultra-sound transducers (Kraintek). The Laboratory uses computational resources of HPC cluster of the Slovak University of Technology and Slovak Infrastructure for High Performance Computing.
LABORATORY OF AUTOMATIZATION
The Department of Automation, Informatics and Applied Mathematics uses available laboratories built within the University Science Park project: The Laboratory of Control Systems , the Laboratory of ICIM and the Laboratory of Integrated information and control systems.