IBA facility overview

A high current version 6 MV Tandetron™ electrostatic tandem accelerator equipped with Ion Beam Analyses (IBA) end station and high energy implantation end station, supplied by High Voltage Engineering Europa B.V. in 2015.

Ion sources:

- SO358 type Duoplasmatron ion source: negative He beam current of up to 5 eµA

- SO860C type cesium sputtering ion source: negative ion beams from hydrogen to bismuth except of noble gases 

Energy range of available beams: from 500 keV to 12 MeV for single charged ions, depending on the extracted ion charge state, e.g. to 18 MeV for He2+, to 54 MeV for Au8+ beams.

 6MV tandetron

foto: 6 MV Tandetron

a) Ion Beam Analysis (IBA)

- Rutherford Backscattering Spectrometry (RBS)

- Elastic Recoil Detection Analysis (ERDA)

- Particle Inducer X-ray Analysis (PIXE) 

- Nuclear Reaction Analysis (NRA)

 

IBA beamline – beam current of up to 100 nA, beam size from 12x12 mm2 to 0,1x0,1 mm2

IBA dedicated end station includes:

- RBS, channeling, ERDA, PIXE, NRA (α,p), (p,α):

  • RBS: Fixed charge particle detector at 170° to the beam direction; AMETEK type BU-012-050-100, with an energy resolution of 13 keV FWHM for 1.8 MeV He ions
  • RBS/ERDA/NRA (α,p) or (p,α): Movable charged particle detector, manually adjustable in the range from 10° to 180°, of the same type. Motorized absorber carousel wheel in front of the detector
  • PIXE: In-vacuum retractable Canberra HPGe X-ray detector model GL0055 with I-TRP preamplifier, 25 μm Be window and retrievable 100 μm Melinex (polyester) absorption foil, with an energy resolution of 147 eV FWHM for the 5.9 keV Mn Kα peak.

Sample holder with 4-axis goniometer (0.01° step in the three rotational axes and 0.01 mm step in vertical translation), optional aerosol filter holder

-NRA (p,γ) and (α,γ) using small NRA chamber behind the IBA chamber - ±30 kV high-voltage biasing for beam energy sweeping

  • external gamma detectors:

- horisontal 2″×2″ LaBr3(Ce) scintillation gamma detector

- vertical Canberra HPGe gamma detector, relative efficiency 26.4%

 

b/ High energy ion implantation:

- substrates up to Ø100 mm, sample heating up to 800°C and cooling down to LN2 temperatures

 

500 kV ion implanter

- Bernas ion source – elements from hydrogen to bismuth

- energy range from 50 keV to 500 keV for single charged ions

- ion beam sweeping

- ion-beam currents up to 2 mA

- implantation chamber for substrates to Ø200 mm

- implantation angle from 0° to 45°

- water cooling

- implantation chamber for substrates to Ø100 mm

- sample heating up to 800 °C and cooling down to LN2 temperatures

 500kV impl

foto: 500 kV ion implanter

Supporting equipment:

- sample preparation and processing equipment - mechanical polishing, chemical preparation, heat treatment (arc melting furnace, annealing furnace), cleaning.

- DCMS - Direct current magnetron sputtering

- RFMS - Radio frequency magnetron sputtering

- Plasma immersion ion implantation (PIII) system up to 40 kV bias voltage.

Advanced Technologies Research Institute
Faculty of Materials Science and Technology in Trnava
Slovak University of Technology in Bratislava
Jána Bottu 8857/25
917 24 Trnava
GPS:  48.37088 17.572509

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