500 kV Ion Implanter

 500kV implantátor

 

Ion Beam Modification of Materials

Synthesis and modification of materials can be implemented via:

  • ion implantation

  • ion beam mixing

Ion implantation

Ion implantation is a process in which the substrate is bombarded by accelerated ions of addition. The aim is to incorporate the atoms of additives into the base material of the sample. With changing the energy of implanted ions, the incorporation depth of additive atoms also changes. By combining multiple energy, it is possible to achieve the required depth concentration profile of the implanted element. The ion implantation energy ranges from 20 keV to 50 MeV. The maximum diameter of the implanted substrate is 20 cm for a 500 kV implanter, and 10 cm for a 6 MV Tandetron. The implanted substrate can be cooled by water, liquid nitrogen, or heated.

Ion beam mixing

Ion beam mixing means mixing and alloying of atoms in the interface of two different materials during irradiation by ions. The method can be used mainly in joining non-equilibrium and metastable alloys and intermetallic compounds.

Application of ion implantation and ion beam mixing

The main objective is to change properties of the surface and subsurface areas of materials. Though implantation is one of the key technologies of the semiconductor industry, it can be also applied to increase the surface wear-resistance, enhanced hardness, abrasion-wear, making corrosion-protective layers and biocompatible surfaces. It is also used for targeted modification of the electrical, magnetic, optical and other physical or chemical properties of the surface layers. The current application area is the formation of nanostructures and nanoporosity and modification of their properties.

   



 

Advanced Technologies Research Institute
Faculty of Materials Science and Technology in Trnava
Slovak University of Technology in Bratislava
Jána Bottu 8857/25
917 24 Trnava
GPS:  48.37088 17.572509

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