6 MV Tandem Accelerator

The Workplace is targeted at on the use of accelerated ions for synthesis, modification and analysis of materials. There are two key devices: 6 MV Tandetron – a linear tandem ion accelerator, and a 500 kV ion implanter. Accelerating voltage of Tandetron is from 300 kV, that of the implanter from 20 kV. They make it possible to accelerate almost all elements, starting from hydrogen up to gold, except for inert gases. The total achievable energy range of accelerated ions of the two devices represents the interval from 10 keV up to 50 MeV. The maximum achievable power is 12 MeV for hydrogen, 18 MeV for helium and 50 MeV for heavy elements such as gold. Transport of ion beam and the experiments are performed in the experimental chambers in a high vacuum. 6 MV Tandetron is used for:

  • Ion Beam Analysis (IBA)

  • Ion Beam Modification of Materials (IBMM)

foto atri iony 1

Currently, there are two workstations:

  • analytical experimental chamber

  • high-energy implantation chamber.

The system is prepared to connect other beamlines with workstations and thus enhance its experimental and analytical options. System of 500 kV implanter is primary dedicated to ion implantation.

 Ion Beam Analysis

The IBA analysis by accelerated ions is considered non-destructive. An ion beam of high energy is a very effective tool to investigate the elemental composition and, to a certain extent, structure the material surface layers. A focused accelerated ion volume passes through a system of collimators and falls on the observed sample. Selection of the detector and arrangement of the experiment depends on the method applied. The interaction of the impinging ions with the atoms of the sample leads to multiple physical phenomena. A typical diameter of the analysing ion beams ranges between 2 to 5 mm; a typical beam current is usually of units to tens of nA. A suitable combination of impinging ions, their energy and incidence angle and the sample material can provide the optimum conditions for the experimental finding of the required information about the sample. Depending on which component of the interaction is detected, the following analytical methods can be used:

  • RBS – Rutherford Backscattering Spectrometry for detecting the energy of the backscattered ions
  • RBS channeling/blocking – for measuring the angle dependence of RBS spectrum of the incident or scattered ions in respect to the crystallographic planes and axis of crystalline sample
  • ERDA – Elastic Recoil Detection Analysis for detecting the energy spectrum of the ions outscattered (recoil) from the sample material
  • PIXE – Proton (Particle) Induced X-ray Emission – for detecting the spectrum of typical X-ray
  • NRA – Nuclear Reaction Analysis – for detecting the products of the nuclear reactions induced in the sample by incident ions.


The depth of analysis is typically a micrometer from the surface, in specific cases up to tens of micrometers. It is possible to examine thin layers as well as nanolayers. The surface depth resolution is several nanometers. Analytical sensitivity for the additive elements and impurities achieves the level of ppm.


Photo: Schmidt B;Wetzig K.: Ion beams in materials processing and analysis (2013)


Advanced Technologies Research Institute
Faculty of Materials Science and Technology in Trnava
Slovak University of Technology in Bratislava
Jána Bottu 8857/25
917 24 Trnava
GPS:  48.37088 17.572509

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