Ion beam technologies enable to synthetize new materials, which are impossible by classical methods. Ion beam bombardment introduces the dopant (chemical element) into the substrate material at concentrations much higher than their respective solubility limits. Moreover ion-solid interaction results in modification of the substrate structure, interface mixing and other fascinating effects. Our equipment enables us to work with virtually all elements of the Periodic Table with energies ranging from 40keV up to 50MeV. Further the complex plasma-surface processes involved in sputtering, etching, ion implantation and deposition at nanoscale level is essential for design of new materials, surfaces and thin films. Further activities are dedicated to investigation of plasma/surface interaction in technological plasmas.


6MV Tandetron Tandem Accelerator

Experimental end-station for ion implantation (wafer size up to 100mm) with substrate temperature control (-195 °C to 800°C). End-station for Ion Beam Analysis covering RBS, PIXE and ERD (hydrogen depth profiling)

500kV Implanter

Experimental end-station for ion implantation (up to 100mm) with substrate temperature control (-195 °C to 800°C). Semi-automatic single wafer (up to 200mm) processing end-station

Magnetron sputering Cluster-System ST 75 DC/RF

Plasma power 300 W, Discharge current 1 A, Frequency 13,56 MHz,  DC unit with 3 circular targets (∅ 75mm) and  RF unit with 3 circular targets (∅75 mm). Maximum substrate diameter 100 mm with maximum height 10 mm. Substrat heating up to  500°C with substrate rotation up to 20rpm.

PIII – Plasma Immersion Ion Implantation

Plasma power 1 000 W, Frequency of RF antena 13,56 MHz, Accelerating voltage (substrate voltage) -20 / -35 kV with pulsed frequencies 1 - 100 µs. Vertical shift of the substrate 30 cm and rotation 0 - 30 rpm.

Ellipsometer (M 2000)

Možnosť in-situ aj ex-situ merania, Meranie hrúbky vrstiev: od sup-nm do desiatok mikrometrov pre transparentné vrstvy, Širokospektrálne meranie, Vlnová dĺžka 245 – 1000 nm.



Problems solved by researchers in the frame of applied research for industry are e. g. development of computer application for numerical modeling of magnetic fields in the high reliability relays (Hengstler/Danaher) and design and optimization of high performance ultra-sound transducers (Kraintek). The Laboratory uses computational resources of HPC cluster of the Slovak University of Technology and Slovak Infrastructure for High Performance Computing.


The Department of Automation, Informatics and Applied Mathematics uses available laboratories built within the University Science Park project: The Laboratory of Control Systems , the Laboratory of ICIM  and the Laboratory of Integrated information and control systems.

Advanced Technologies Research Institute
Faculty of Materials Science and Technology in Trnava
Slovak University of Technology in Bratislava
Jána Bottu 8857/25
917 24 Trnava
GPS:  48.37088 17.572509

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