Plasma technology



Plasma Immersion Ion Implantation (PIII)

The technique of PIII has been developed in an effort to obtain increased ion current densities and therefore to achieve a substantial reduction in implant time as well as to avoid the line-of-sight limitation inherent to the conventional beam line ion implantation process. The efficiency of the PIII is superior to that of the standard implantation process, particularly for low energy, high dose implants.

In PBII a component is immersed in a processing plasma discharge containing the desired species, and negative high-voltage pulses are applied directly to the component. Ions are extracted from the plasma and are implanted into the material’s surface.

Reactive Magnetron Sputtering

Reactive magnetron sputtering is a popular and proven technology for the production of thin films and coatings such as oxides, nitrides and carbides. In the process of plasma deposition, ions of argon from plasma discharge are accelerated towards the metal target. Incidence of ions on target causes a series of collisions between the atoms of target, which lead to removal of the atoms. The process of the ion removal is as sputtering. In reactive deposition mode, a small amount of reactive gases such as oxygen or nitrogen may be added to the process. These react with the material being sputtered to form the desired layer of compounds on the substrate. This may leads to the unwanted effect of the target "poisoning". Once the reactive gas is introduced into the process chamber, it reacts with the surfaces, such as walls of the chamber and sputtered target. Intensive erosion (caused by sputtering) in the magnetron channel delays the complete "poisoning" (forming the mixture) of the channel surface. Poisoning of the channel therefore usually undergoes various stages such as the function of the reactive gas partial pressure and time. The initial phase is the clean metal channel of the target (mode of "metal" sputtering), and the final stage is a completely reacted channel surface (mode of "mixture" or completely poisoned sputtering). Sub-stages are called transition areas.



Advanced Technologies Research Institute
Faculty of Materials Science and Technology in Trnava
Slovak University of Technology in Bratislava
Jána Bottu 8857/25
917 24 Trnava
GPS:  48.37088 17.572509

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